1/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a 1.2v drive nch+pch mosfet em6m2 z structure z dimensions (unit : mm) silicon n-channel mosfet / silicon p-channel mosfet z features 1) nch mosfet and pch mosfet are put in emt6 package. 2) high-speed switching. 3) low voltage drive (1.2v drive). 4) built-in g-s protection diode. z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) em6m2 t2r 8000 type z absolute maximum ratings (ta=25 c) ?1 parameter v v dss symbol 20 v v gss 8 ma i d 200 ma i dp 400 mw / total p d 150 mw / elemen t 120 c tch 150 c tstg ?55 to +150 tr1 : n-ch ?20 10 200 400 tr2 : p-ch limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed ?1 pw 10s, duty cycle 1% ?2 each terminal mounted on a recommended land ?2 emt6 abbreviated symbol : m02 each lead has same dimensions (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (6) (3) (4) (2) (5)
2/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 n-ch z electrical characteristics (ta=25 c) g ate-source leakage d rain-source breakdown voltage z ero gate voltage drain current g ate threshold voltage s tatic drain-source on-state r esistance f orward transfer admittance i nput capacitance o utput capacitance r everse transfer capacitance t urn-on delay time r ise time t urn-off delay time f all time ?pulsed parameter symbol i gss y fs min. ?? 10 av gs = 8v, v ds =0v typ. max. unit conditions v (br) dss 20 ?? vi d = 1ma, v gs =0v i dss ?? 1 av ds = 20v, v gs =0v v gs (th) 0.3 ? 1.0 v v ds = 10v, i d = 1ma ? 0.7 1.0 i d = 200ma, v gs = 4.0v ? 0.8 1.2 ? ? ? i d = 200ma, v gs = 2.5v ? 1.6 4.8 i d = 20ma, v gs = 1.2v 0.2 ?? sv ds = 10v, i d = 200ma c iss ? 25 ? pf v ds = 10v c oss ? 10 10 ? pf v gs = 0v c rss ? 5 ? pf f=1mhz t d (on) ? 10 ? ns t r ? 15 ? ns t d (off) ? 10 ? ns t f ?? ns ? 1.0 1.4 i d = 200ma, v gs = 1.8v ? 1.2 2.4 ? ? i d = 40ma, v gs = 1.5v r ds (on) ? ? ? ? ? ? v dd 10 v i d = 150ma v gs = 4.0v r g = 10? r l 67? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 100ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed p-ch z electrical characteristics (ta=25 c) g ate-source leakage d rain-source breakdown voltage z ero gate voltage drain current g ate threshold voltage s tatic drain-source on-state r esistance f orward transfer admittance i nput capacitance o utput capacitance r everse transfer capacitance t urn-on delay time r ise time t urn-off delay time f all time ?pulsed parameter symbol i gss y fs min. ?? 10 av gs = 10v, v ds =0v typ. max. unit conditions v (br) dss ? 20 ?? vi d = ? 1ma, v gs =0v i dss ??? 1 av ds = ? 20v, v gs =0v v gs (th) ? 0.3 ?? 1.0 v v ds = ? 10v, i d = ? 100 a ? 0.8 1.2 i d = ? 200ma, v gs = ? 4.5v ? 1.0 1.5 ? ? ? i d = ? 100ma, v gs = ? 2.5v ? 2.4 9.6 i d = ? 10ma, v gs = ? 1.2v 0.2 ?? sv ds = ? 10v, i d = ? 200ma c iss ? 115 ? pf v ds = ? 10v c oss ? 10 6 ? pf v gs = 0v c rss ? 6 ? pf f=1mhz t d (on) ? 4 ? ns t r ? 17 ? ns t d (off) ? 17 ? ns t f ?? ns ? 1.3 2.2 i d = ? 100ma, v gs = ? 1.8v ? 1.6 3.5 ? ? i d = ? 40ma, v gs = ? 1.5v r ds (on) ? ? ? ? ? ? v dd ? 10 v i d = ? 100ma v gs = ? 4.5v r g = 10? r l 100? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 200ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed
3/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 n-ch z electrical characteristic curve 0.0 0.5 1.0 1 .5 0.00001 0.0001 0.001 0.01 0.1 1 drain current : i d (a) gate-source voltage : v gs (v) fig.3 typical transfer characteristics ta=125c 75c 25c ?25c v ds =10v pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.2v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 0.1 0.2 0.3 0.4 0.5 00.20.40.60.81 v gs = 1.2v v gs = 4.5 v v gs = 2.5 v v gs = 1.8 v v gs = 1.3v v gs = 1.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 ta= 25c pulsed v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.0v 0 0.1 0.2 0.3 0.4 0.5 024 6810 v gs = 1.5v ta=25c pulsed v gs = 1.3v v gs = 2.5v v gs = 1.8v v gs = 1.2v 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.8v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 4.0v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.5v pulsed ta= 125c ta=75c ta=25c ta= - 25c fig .1 typical output characteristics( ) fig .2 typical output char acter istics( ) fig .4 static drain-source on-state resistance vs. drain cur rent( ) fig .5 static drain-source on-state resistance vs. dr ain cur rent( ) fig .7 static drain-source on-state resistance vs. drain cur rent( ) fig .8 static dr ain-source on-state resistance vs. drain current( ) drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ] fig.9 static drain-source on-state resistance vs. drain cur rent( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig .6 static drain- sour ce on- state resistance vs. dr ain curr ent( ) drain-current : i d [a] static drain-source on-state resistance : r ds ( on) [m ? ]
4/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 0 0.5 1 1.5 2 2.5 0246810 ta=25c pulsed i d = 0.02a i d = 0.2a 0.1 1 0.01 0.1 1 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c fig .12 static drain-source on-state resistance vs. gate source voltag e fig .10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : v gs [v] 1 10 100 0.01 0.1 1 10 100 ciss coss crss ta= 25c f=1mhz v gs =0v fig .14 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 10 swithing time : t (ns) drain current : i d (a) 100 1000 1 1 fig.13 switching characteristics t d(off) t r t d(on) t f ta =25c v dd =10v v gs =4v r g =10? pulsed source current : i s (a) source-drain voltage : v sd (v) 1 .5 1 0.5 0.0 0.01 0.1 1 fig.11 source current vs. source-drain voltage v gs =0v pulsed ta=125c 75c 25c ?25c
5/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 p-ch z electrical characteristic curve 0 0.05 0.1 0.15 0.2 02 46 810 ta=25c pulsed v gs = -1.0v v gs = -1.2v v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v 0 0.05 0.1 0.15 0.2 0 0.2 0.4 0.6 0.8 1 v gs = -2.5v v gs = -2.0v v gs = -1.8v v gs = -10.0v v gs = -4.5v v gs = -3.2v v gs = -1.2v v gs = -1.0v v gs = -1.5v ta=25c pulsed 0.0001 0.001 0.01 0.1 1 00 . 5 11 . 5 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.2v v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = -2.5v pulsed ta= 125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -4.5v pulsed ta= 125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.8v pulsed ta= 125c ta=75c ta=25c ta= -25c fi g .1 typi cal output char acter i stics( ) fig .2 typical output characteristics( ) fig .3 typical tr ansfer char acter i stics fig .4 static drain-source on-state resistance vs. drain current( , ) fig .5 static dr ai n- sour ce on- state resistance vs. drain current( 3 ) fig .6 static drain-source on-state resistance vs. drain current( ) fig .7 static drain-source on-state resistance vs. drain current( ) drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig .8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.2v pulsed ta=125c ta=75c ta=25c ta= -25c drain-current : -i d [a] fig .9 static dr ai n- sour ce on- state resistance vs. drain current( ) static drain-source on-state resistance : r ds (on)[m ? ]
6/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 0 1 2 3 4 5 0246810 ta=25c pulsed i d = - 0.01a i d = -0.2a 0.01 0.1 1 00.511.5 v gs =0v pulsed ta= 125c ta=75c ta=25c ta= -25c 0 1 2 3 4 5 00.511.5 ta=25c v dd = -10v i d = -0.2a r g =10 ? pulsed 1 10 100 1000 0.01 0.1 1 10 100 coss crss ta=25c f=1mhz v gs =0v ciss 0.1 1.0 0.01 0.1 1 v ds = -10v pulsed ta=-25c ta=25c ta=75c ta=125c 1 10 100 1000 0.01 0.1 1 t r t f t d (on) t d (off) ta=25c v dd = -10v v gs =-4.5v r g =10 ? pulsed fig .11 reverse drain cur rent vs. sourse-drain voltag e fig .12 static drain-source on- state resistance vs. gate source voltage fig .10 forwar d tr ansfer admittance vs. drain current fig .14 dynamic input character istics fig .15 typical capacitance vs. drain-source voltag e fig.13 switching characteristics forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf]
7/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.07 - rev.a data sheet em6m2 n-ch z measurement circuit fig.1-1 switching time measurement circu it ? v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d off t r t on t d on fig.1-2 switching waveforms p-ch z measurement circuit fig.2-1 switching time measurement circuit v gs r g v ds i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds t f t off t on t d off fig.2-2 switching waveforms t r t d on 90% z notice this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit.
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